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GaInP中InP量子点的激子精细结构分裂

Exciton fine structure splitting in InP quantum dots in GaInP.

作者信息

Ellström C, Seifert W, Pryor C, Samuelson L, Pistol M-E

机构信息

Solid State Physics, Box 118, University of Lund, S-22100, Sweden.

出版信息

J Phys Condens Matter. 2007 Jul 25;19(29):295211. doi: 10.1088/0953-8984/19/29/295211. Epub 2007 Jun 11.

Abstract

We have investigated the electronic structure of excitons in InP quantum dots in GaInP. The exciton is theoretically expected to have four states. Two of the states are allowed to optically decay to the ground (vacuum) state in the dipole approximation. We see these two lines in photoluminescence (PL) experiments and find that the splitting between the lines (the fine structure splitting) is 150(± 30) µeV. The lines were perpendicularly polarized. We verified that the lines arise from neutral excitons by using correlation spectroscopy. The theoretical calculations show that the polarization of the emission lines are along and perpendicular to the major axis of elongated dots. The fine structure splitting depends on the degree of elongation of the dots and is close to zero for dots of cylindrical symmetry, despite the influence of the piezoelectric polarization, which is included in the calculation.

摘要

我们研究了GaInP中InP量子点里激子的电子结构。理论上预计激子有四个状态。在偶极近似下,其中两个状态允许通过光学方式衰减到基态(真空态)。我们在光致发光(PL)实验中看到了这两条谱线,并发现它们之间的分裂(精细结构分裂)为150(± 30) μeV。这些谱线是垂直偏振的。我们通过关联光谱法证实这些谱线源自中性激子。理论计算表明,发射谱线的偏振方向沿着并垂直于拉长量子点的主轴。精细结构分裂取决于量子点的拉长程度,并且对于具有圆柱对称性的量子点,尽管计算中考虑了压电极化的影响,该分裂仍接近于零。

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