State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China.
Chem Commun (Camb). 2011 May 28;47(20):5786-8. doi: 10.1039/c1cc11281c. Epub 2011 Apr 14.
A Co(3)O(4) monolayer hollow-sphere array with mesoporous walls exhibits high pseudocapacitances of 358 F g(-1) at 2 A g(-1) and 305 F g(-1) at 40 A g(-1), as well as excellent cycling stability for application as pseudocapacitors.
具有介孔壁的 Co(3)O(4) 单层空心球阵列表现出高赝电容,在 2 A g(-1) 时为 358 F g(-1),在 40 A g(-1) 时为 305 F g(-1),并且作为赝电容器具有优异的循环稳定性。