Microelectronics Sciences Laboratories, Columbia University, New York, New York 10027, USA.
Opt Lett. 2011 Apr 15;36(8):1416-8. doi: 10.1364/OL.36.001416.
Computational studies are used to show that the crystalline structure of Si causes the waveguide Kerr effective nonlinearity, γ, to vary by 10% for in-plane variation of the orientation of a silicon nanowire waveguide (SiNWG) fabricated on a standard silicon-on-insulator wafer. Our analysis shows that this angular dependence of γ can be employed to form a nonlinear Kerr grating in dimensionally uniform SiNWGs based on either ring resonators or cascaded waveguide bends. The magnitude of the nonlinear index variation in these gratings is found to be sufficient for phase matching in four-wave mixing and other optical parametric processes.
计算研究表明，硅的晶体结构导致波导克尔有效非线性系数γ随在标准绝缘体上硅（SOI）晶圆上制造的硅纳米线波导（SiNWG）的取向平面内变化而变化 10%。我们的分析表明，γ的这种角度依赖性可用于在基于环形谐振器或级联波导弯曲的尺寸均匀的 SiNWG 中形成非线性克尔光栅。这些光栅中的非线性折射率变化幅度足以实现四波混频和其他光参量过程中的相位匹配。
