Mohammed Raghad Y
Department of Physics, College of Science, University of Duhok, Duhok 42001, Iraq.
Materials (Basel). 2021 Nov 9;14(22):6748. doi: 10.3390/ma14226748.
Zinc sulfide (ZnS) thin films were prepared and synthesized by the chemical bath deposition (CBD) technique on microscopic glass substrates using stoichiometric amounts of the precursor materials (ZnSO·7HO, NHOH, and CS(NH)). Structural, morphological, compositional, and optical characterization of the films were studied. The obtained thin films were found to exhibit polycrystalline possessions. The effect of annealing temperature on the crystallographic structure and optical bandgap of ZnS thin films were both examined. The grain size and unit cell volume were both found to be increased. In addition, the strain, dislocation density, and the number of crystallites were found to be decreased with annealing temperature at 300 °C. However, the annealed sample was perceived to have more Zn content than S. The optical characterization reveals that the transmittance was around 76% of the as-deposited thin film and had been decreased to ~50% with the increasing of the annealing temperature. At the same time, the bandgap energy of the as-deposited film was 3.98 eV and was found to be decreased to 3.93 eV after annealing.
采用化学浴沉积（CBD）技术，使用化学计量比的前驱体材料（ZnSO₄·7H₂O、NH₄OH和CS(NH₂)₂）在微观玻璃基板上制备并合成了硫化锌（ZnS）薄膜。对薄膜进行了结构、形态、成分和光学表征研究。发现所得薄膜具有多晶特性。研究了退火温度对ZnS薄膜晶体结构和光学带隙的影响。发现晶粒尺寸和晶胞体积均增大。此外，在300℃退火时，应变、位错密度和微晶数量均随退火温度降低。然而，退火后的样品中锌含量比硫含量高。光学表征表明，沉积态薄膜的透过率约为76%，随着退火温度升高，透过率降至约50%。同时，沉积态薄膜的带隙能量为3.98 eV，退火后降至3.93 eV。
