Carrasco-Chavez Laura Aislinn, Rubio-Valle José F, Jiménez-Pérez Abimael, Martín-Alfonso José E, Carrillo-Castillo Amanda
Institute of Engineering and Technology, Autonomous University of Ciudad Juarez, Juarez Chihuahua 32310, Mexico.
Chemical Product and Process Technology Research Center (Pro2TecS), Department of Chemical Engineering and Materials Science, University of Huelva, 21071 Huelva, Spain.
Micromachines (Basel). 2023 May 31;14(6):1168. doi: 10.3390/mi14061168.
Chalcogenides semiconductors are currently being studied as active layers in the development of electronic devices in the field of applied technology. In the present paper, cadmium sulfide (CdS) thin films containing nanoparticles of the same material as the active layer were produced and analyzed for their application in fabricating optoelectronic devices. CdS thin films and CdS nanoparticles were obtained via soft chemistry at low temperatures. The CdS thin film was deposited via chemical bath deposition (CBD); the CdS nanoparticles were synthesized via the precipitation method. The construction of a homojunction was completed by incorporating CdS nanoparticles on CdS thin films deposited via CBD. CdS nanoparticles were deposited using the spin coating technique, and the effect of thermal annealing on the deposited films was investigated. In the modified thin films with nanoparticles, a transmittance of about 70% and a band gap between 2.12 eV and 2.35 eV were obtained. The two characteristic phonons of the CdS were observed via Raman spectroscopy, and the CdS thin films/CdS nanoparticles showed a hexagonal and cubic crystalline structure with average crystallite size of 21.3-28.4 nm, where hexagonal is the most stable for optoelectronic applications, with roughness less than 5 nm, indicating that CdS is relatively smooth, uniform and highly compact. In addition, the characteristic curves of current-voltage for as-deposited and annealed thin films showed that the metal-CdS with the CdS nanoparticle interface exhibits ohmic behavior.
硫族化物半导体目前正作为应用技术领域电子器件开发中的有源层进行研究。在本文中,制备了含有与有源层相同材料纳米颗粒的硫化镉(CdS)薄膜,并对其在制造光电器件中的应用进行了分析。CdS薄膜和CdS纳米颗粒通过低温软化学方法获得。CdS薄膜通过化学浴沉积(CBD)法沉积;CdS纳米颗粒通过沉淀法合成。通过将CdS纳米颗粒掺入通过CBD沉积的CdS薄膜上,完成了同质结的构建。使用旋涂技术沉积CdS纳米颗粒,并研究了热退火对沉积薄膜的影响。在含有纳米颗粒的改性薄膜中,获得了约70%的透光率和2.12 eV至2.35 eV的带隙。通过拉曼光谱观察到了CdS的两个特征声子,CdS薄膜/CdS纳米颗粒呈现出六方和立方晶体结构,平均晶粒尺寸为21.3 - 28.4 nm,其中六方结构对于光电器件应用最稳定,粗糙度小于5 nm,表明CdS相对光滑、均匀且高度致密。此外,沉积态和退火态薄膜的电流 - 电压特性曲线表明,具有CdS纳米颗粒界面的金属 - CdS表现出欧姆行为。