INM-Leibniz Institute for New Materials, Campus D2 2, 66123 Saarbrücken, Germany.
Dalton Trans. 2011 Jun 14;40(22):6028-32. doi: 10.1039/c1dt10067j. Epub 2011 May 3.
A new type of precursor has been developed by molecular design and synthesised to produce tin doped indium oxide (ITO). The precursor consists of a newly developed bimetallic indium tin alkoxide, Me(2)In(O(t)Bu)(3)Sn (Me = CH(3), O(t)Bu = OC(CH(3))(3)), which is in equilibrium with an excess of Me(2)In(O(t)Bu). This quasi single-source precursor is applied in a sol-gel process to produce powders and coatings of ITO using a one-step heat treatment process under an inert atmosphere. The main advantage of this system is the simple heat treatment that leads to the disproportionation of the bivalent Sn(II) precursor into Sn(IV) and metallic tin, resulting in an overall reduced state of the metal in the final tin doped indium oxide (ITO) material, hence avoiding the usually necessary reduction step. Solid state (119)Sn-NMR measurements of powder samples confirm the appearance of Sn(II) in an amorphous gel state and of metallic tin after annealing under nitrogen. The corresponding preparation of ITO coatings by spin coating on glass leads to transparent conductive layers with a high transmittance of visible light and a low electrical resistivity without the necessity of a reduction step.
通过分子设计和合成，开发了一种新型前体，用于生产掺锡氧化铟（ITO）。该前体由一种新开发的双金属锡铟醇盐 Me(2)In(O(t)Bu)(3)Sn（Me = CH(3)，O(t)Bu = OC(CH(3))(3)）组成，它与过量的 Me(2)In(O(t)Bu)处于平衡状态。这种准单源前体可应用于溶胶-凝胶工艺，在惰性气氛下通过一步热处理工艺生产 ITO 粉末和涂层。该系统的主要优点是热处理简单，导致二价 Sn(II)前体歧化为 Sn(IV)和金属锡，从而导致最终掺锡氧化铟（ITO）材料中金属的总还原态，从而避免了通常需要的还原步骤。粉末样品的固态 (119)Sn-NMR 测量证实了在氮气退火后，无定形凝胶状态下 Sn(II)和金属锡的出现。通过在玻璃上旋涂制备 ITO 涂层，可得到具有高可见光透过率和低电阻率的透明导电层，而无需还原步骤。
