Nano-Photonics Research Center, Korea Institute of Science and Technology, PO Box 131, Cheongryang, Seoul, 130-650, Korea.
Nanotechnology. 2011 Jul 15;22(28):285712. doi: 10.1088/0957-4484/22/28/285712. Epub 2011 Jun 9.
High quality single-crystalline indium tin oxide (ITO) nanowires with controlled Sn contents of up to 32.5 at.% were successfully synthesized via a thermal metal co-evaporation method, based on a vapor-liquid-solid growth mode, at a substrate temperature of as low as 540 °C. The high solubility of Sn in the nanowires was explained with the existence of Sn(2+) ions along with Sn(4+) ions: the coexistence of Sn(2+) and Sn(4+) ions facilitated their high substitutional incorporation into the In(2)O(3) lattice by relaxing structural and electrical disturbances due to the differences in ionic radii and electrical charges between Sn and In(3+) ions. It was revealed that, while the lattice parameter of the ITO nanowires had a minimum value at a Sn content of 6.3 at.%, the electrical resistivity had a minimum value of about 10(-3) Ω cm at a Sn content of 14 at.%. These structural and electrical behaviors were explained by variation in the relative and total amounts of the two species, Sn(2+) and Sn(4+).
通过热金属共蒸发方法，基于汽-液-固生长模式，在低至 540°C 的衬底温度下，成功合成了具有高达 32.5 原子百分比的可控 Sn 含量的高质量单晶氧化铟锡 (ITO) 纳米线。Sn 在纳米线中具有高溶解度的原因是 Sn(2+) 离子与 Sn(4+) 离子同时存在：Sn(2+) 和 Sn(4+) 离子的共存通过缓解由于 Sn 和 In(3+) 离子之间的离子半径和电荷差异而导致的结构和电干扰，促进了它们高取代性地掺入 In(2)O(3)晶格中。结果表明，当 Sn 含量为 6.3 原子百分比时，ITO 纳米线的晶格参数具有最小值，而当 Sn 含量为 14 原子百分比时，其电阻率具有约 10(-3) Ω cm 的最小值。这些结构和电行为可以通过两种物质，Sn(2+) 和 Sn(4+) 的相对和总量的变化来解释。
