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基于硅技术的微电极阵列的周围神经再生。

Peripheral nerve regeneration through microelectrode arrays based on silicon technology.

机构信息

Departament de Biologia Cellular i Fisiologia, Facullat de Medicina, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain.

出版信息

Restor Neurol Neurosci. 1996 Jan 1;9(3):151-60. doi: 10.3233/RNN-1996-9303.

DOI:10.3233/RNN-1996-9303
PMID:21551843
Abstract

This paper describes some developments, made to obtain a chronic neural interface to record signals from regenerated peripheral nerves. Microperforated silicon dices, fabricated by techniques compatible with CMOS processes, were coupled in silicone nerve chambers and implanted between the severed ends of peripheral nerves in rats. Three configurations of perforated dices with 25 via-holes of 100 μm diameter, 121 via-holes of 40 μm and 400 via-holes of 10 μm were assessed. The feasibility of axonal regeneration through the dices via-holes was proved by histological and physiological methods over 3 months post-implantation. The regenerated nerves were organized in fascicles corresponding to the grid pattern of the via-holes. However, nerve regeneration was difficult and distal re-innervation delayed with respect to simple tubulization repair. The size of the via-holes and the total open area are determinants of the degree and quality of regeneration. Further improvements are needed in both the microelectrode dice design and in neurobiological stimulation of regeneration.

摘要

本文介绍了一些进展,旨在获得一种慢性神经接口,以记录再生周围神经的信号。通过与 CMOS 工艺兼容的技术制造的微穿孔硅片被耦合在硅酮神经室内,并植入大鼠切断的周围神经末端之间。评估了三种具有 25 个 100μm 直径通孔、121 个 40μm 通孔和 400 个 10μm 通孔的穿孔硅片的配置。通过组织学和生理学方法在植入后 3 个月证明了轴突通过硅片通孔再生的可行性。再生的神经在网格图案的对应纤维束中组织。然而,与简单的管状修复相比,神经再生困难且远端再支配延迟。通孔的大小和总开口面积是再生程度和质量的决定因素。需要在微电极硅片设计和神经再生的神经生物学刺激方面进一步改进。

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Peripheral nerve regeneration through microelectrode arrays based on silicon technology.基于硅技术的微电极阵列的周围神经再生。
Restor Neurol Neurosci. 1996 Jan 1;9(3):151-60. doi: 10.3233/RNN-1996-9303.
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