Akin T, Najafi K, Smoke R H, Bradley R M
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor 48109.
IEEE Trans Biomed Eng. 1994 Apr;41(4):305-13. doi: 10.1109/10.284958.
A micromachined silicon sieve electrode has been developed and fabricated to record from and stimulate axons/fibers of the peripheral nervous system by utilizing the nerve regeneration principle. The electrode consists of a 15-microns-thick silicon support rim, a 4-microns-thick diaphragm containing different size holes to allow nerve regeneration, thin-film iridium recording/stimulating sites, and an integrated silicon ribbon cable, all fabricated using boron etch-step and silicon micromachining techniques. The thin diaphragm is patterned using reactive ion etching to obtain different size holes with diameters as small as 1 micron and center-center spacings as small as 10 microns. The holes are surrounded by 100-200 microns 2 anodized iridium oxide sites, which can be used for both recording and stimulation. These sites have impedances of less than 100 k omega @ 1 kHz and charge delivery capacities in the 4-6 mC/cm2 range. The fabrication process is single-sided, has high yield, requires only five masks, and is compatible with integrated multilead silicon ribbon cables. The electrodes were implanted between the cut ends of peripheral taste fibers of rats (glossopharyngeal nerve), and axons functionally regenerated through holes, responding to chemical, mechanical, and thermal stimuli.
一种微机械加工的硅筛电极已被开发并制造出来，它利用神经再生原理来记录和刺激外周神经系统的轴突/纤维。该电极由一个15微米厚的硅支撑边缘、一个4微米厚的带有不同尺寸孔以允许神经再生的隔膜、薄膜铱记录/刺激位点以及一条集成硅带状电缆组成，所有这些都是使用硼蚀刻步骤和硅微加工技术制造的。薄隔膜通过反应离子蚀刻进行图案化，以获得直径小至1微米、中心间距小至10微米的不同尺寸的孔。这些孔被100 - 200微米²的阳极氧化铱位点包围，这些位点可用于记录和刺激。这些位点在1 kHz时的阻抗小于100 kΩ，电荷传递能力在4 - 6 mC/cm²范围内。制造过程是单面的，成品率高，仅需要五个掩膜，并且与集成多导联硅带状电缆兼容。将电极植入大鼠外周味觉纤维（舌咽神经）的切断端之间，轴突通过孔进行功能性再生，对化学、机械和热刺激作出反应。
