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通过体纳米复合材料的调制掺杂增强功率因数。

Power factor enhancement by modulation doping in bulk nanocomposites.

机构信息

Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States.

出版信息

Nano Lett. 2011 Jun 8;11(6):2225-30. doi: 10.1021/nl201206d. Epub 2011 May 10.

Abstract

We introduce the concept of modulation doping in three-dimensional nanostructured bulk materials to increase the thermoelectric figure of merit. Modulation-doped samples are made of two types of nanograins (a two-phase composite), where dopants are incorporated only into one type. By band engineering, charge carriers could be separated from their parent grains and moved into undoped grains, which would result in enhanced mobility of the carriers in comparison to uniform doping due to a reduction of ionized impurity scattering. The electrical conductivity of the two-phase composite can exceed that of the individual components, leading to a higher power factor. We here demonstrate the concept via experiment using composites made of doped silicon nanograins and intrinsic silicon germanium grains.

摘要

我们提出了在三维纳米结构体材料中采用调制掺杂来提高热电优值的概念。调制掺杂样品由两种类型的纳米颗粒(两相复合材料)组成,其中掺杂剂仅掺入到一种类型中。通过能带工程,可以将载流子与其母体颗粒分离并转移到未掺杂的颗粒中,与均匀掺杂相比,由于减少了离子杂质散射,载流子的迁移率将会提高。两相复合材料的电导率可以超过各组成部分的电导率,从而导致更高的功率因子。我们通过使用掺杂硅纳米颗粒和本征硅锗颗粒制成的复合材料来进行实验验证了这一概念。

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