Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Gwangju, Korea.
Nanotechnology. 2011 Jun 24;22(25):254023. doi: 10.1088/0957-4484/22/25/254023. Epub 2011 May 16.
We demonstrated analog memory, synaptic plasticity, and a spike-timing-dependent plasticity (STDP) function with a nanoscale titanium oxide bilayer resistive switching device with a simple fabrication process and good yield uniformity. We confirmed the multilevel conductance and analog memory characteristics as well as the uniformity and separated states for the accuracy of conductance change. Finally, STDP and a biological triple model were analyzed to demonstrate the potential of titanium oxide bilayer resistive switching device as synapses in neuromorphic devices. By developing a simple resistive switching device that can emulate a synaptic function, the unique characteristics of synapses in the brain, e.g. combined memory and computing in one synapse and adaptation to the outside environment, were successfully demonstrated in a solid state device.
我们使用具有简单制造工艺和良好产量均匀性的纳米级二氧化钛双层电阻开关器件展示了模拟存储器、突触可塑性和尖峰时间依赖可塑性（STDP）功能。我们确认了多级电导和模拟存储器特性以及电导变化准确性的均匀性和分离状态。最后，分析了 STDP 和生物三模型，以证明二氧化钛双层电阻开关器件作为神经形态器件中突触的潜力。通过开发一种简单的电阻开关器件，该器件可以模拟突触功能，成功地在固态器件中展示了大脑中突触的独特特性，例如在一个突触中结合记忆和计算以及适应外部环境。
