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HfO₂/HfO双层异质结构的电阻开关及其作为突触的传输特性。

Resistive switching of the HfO /HfO bilayer heterostructure and its transmission characteristics as a synapse.

作者信息

Tan Tingting, Du Yihang, Cao Ai, Sun Yaling, Zhang Hua, Zha Gangqiang

机构信息

State Key Laboratory of Solidification Processing, MIIT Key Laboratory of Radiation Detection Materials and Devices, School of Materials Science and Engineering, Northwestern Polytechnical University Xi'an 710072 China

出版信息

RSC Adv. 2018 Dec 14;8(73):41884-41891. doi: 10.1039/c8ra06230g. eCollection 2018 Dec 12.

DOI:10.1039/c8ra06230g
PMID:35558778
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9092025/
Abstract

In this work, HfO /HfO homo-bilayer structure based resistive random access memory devices were fabricated, and the resistive switching characteristics of the devices were investigated. The samples with an Ar/O ratio of 12 : 2 exhibited improved switching performance including better uniformity, endurance and retention, which was selected to imitate the "learning" and "forgetting" function of biological synapses. The multilevel conductance of the HfO /HfO homo-bilayer structure under the model of pulse voltage suggests its potential to emulate the nonlinear transmission characteristics of the synapse, and a model of multilevel conductance of the HfO /HfO homo-bilayer structure was proposed. The device conductance continuously increases (decreases) in accordance with the number of positive (negative) voltage pulses during the potentiation (depression) process, which can emulate the change of synaptic weight in a biological synapse.

摘要

在这项工作中，制备了基于HfO₂/HfO₂同质双层结构的电阻式随机存取存储器器件，并对器件的电阻开关特性进行了研究。氩气与氧气比例为12∶2的样品表现出改善的开关性能，包括更好的均匀性、耐久性和保持性，该样品被选来模拟生物突触的“学习”和“遗忘”功能。在脉冲电压模型下，HfO₂/HfO₂同质双层结构的多级电导表明其具有模拟突触非线性传输特性的潜力，并提出了HfO₂/HfO₂同质双层结构的多级电导模型。在增强（抑制）过程中，器件电导根据正（负）电压脉冲的数量持续增加（减少），这可以模拟生物突触中突触权重的变化。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/183b2b66ea0f/c8ra06230g-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/23377a1cb118/c8ra06230g-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/9bcbce467457/c8ra06230g-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/20e5a3e98e20/c8ra06230g-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/968d9f0d9eca/c8ra06230g-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/a2c2cfb4055a/c8ra06230g-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/e9f3080dc1ae/c8ra06230g-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/329c54cc0507/c8ra06230g-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/9fa746835a26/c8ra06230g-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/183b2b66ea0f/c8ra06230g-f9.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/23377a1cb118/c8ra06230g-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/9bcbce467457/c8ra06230g-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/20e5a3e98e20/c8ra06230g-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/968d9f0d9eca/c8ra06230g-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/a2c2cfb4055a/c8ra06230g-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/e9f3080dc1ae/c8ra06230g-f6.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/329c54cc0507/c8ra06230g-f7.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/9fa746835a26/c8ra06230g-f8.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/04d4/9092025/183b2b66ea0f/c8ra06230g-f9.jpg

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