Math Department and Gonda Brain Research Center, Bar Ilan University, Ramat Gan 52900, Israel.
Mol Immunol. 2011 Jul;48(12-13):1477-83. doi: 10.1016/j.molimm.2011.04.002. Epub 2011 May 18.
The observed mutation pattern in immunoglobulin (Ig) V genes from peripheral B cells is influenced by several mechanisms, including the targeting of AID to specific DNA motifs, negative selection of B cells unable to express Ig receptor, and positive selection of B cells that carry affinity-increasing mutations. These influences, combined with biased codon usage, produce the well-known pattern of increased replacement mutation frequency in the CDR regions, and decreased replacement frequency in the framework regions. Through the analysis of over 12,000 mutated sequences, we show that the specific location in the V gene also significantly influences mutation accumulation. While this position-specific effect is partially explained by selection, it appears independently of the CDR/FWR structure. To further explore the specific targeting of SHM, we propose a statistical formalism describing the mutation probability of a sequence through the multiplication of independent probabilities. Using this model, we show that C→G (or G→C) mutations are almost as frequent as C→T and G→A mutations, in contrast with C→A (or G→T) mutations, which are as any other mutation. The proposed statistical framework allows us to precisely quantify the effect of V gene position, mutation substitution type, and micro-sequence specificity on the observed mutation pattern.
在周围 B 细胞的免疫球蛋白 (Ig) V 基因中观察到的突变模式受多种机制的影响,包括 AID 靶向特定 DNA 基序、不能表达 Ig 受体的 B 细胞的负选择以及携带亲和力增加突变的 B 细胞的正选择。这些影响,加上偏向密码子的使用,导致 CDR 区域中替换突变频率增加和框架区域中替换频率降低的众所周知的模式。通过对超过 12000 个突变序列的分析,我们表明 V 基因的特定位置也显著影响突变积累。虽然这种位置特异性效应部分可以通过选择来解释,但它似乎独立于 CDR/FWR 结构。为了进一步探索 SHM 的特定靶向性,我们提出了一种统计形式主义,通过独立概率的乘法来描述序列的突变概率。使用这个模型,我们表明 C→G(或 G→C)突变与 C→T 和 G→A 突变一样频繁,而 C→A(或 G→T)突变与任何其他突变一样不频繁。所提出的统计框架使我们能够精确地量化 V 基因位置、突变替代类型和微序列特异性对观察到的突变模式的影响。