Institut d'Electronique Fondamentale, Universite´ Paris-Sud, CNRS UMR 8622, Batiment 220, 91405 Orsay Cedex, France.
Opt Lett. 2011 May 15;36(10):1794-6. doi: 10.1364/OL.36.001794.
We report room-temperature quantum-confined Stark effect in Ge/SiGe multiple quantum wells (MQWs) with light propagating parallel to the plane of the Ge/SiGe MQWs for applications in integrated photonics. Planar waveguides embedded in a p-i-n diode are fabricated in order to investigate the absorption spectra at different reverse bias voltages from optical transmission measurements for both TE and TM polarizations. Polarization dependence of the absorption spectra of the Ge/SiGe MQWs is clearly observed. The planar waveguides exhibit a high extinction ratio and low insertion loss over a wide spectral range for TE polarization.
我们在与 Ge/SiGe 多量子阱(MQWs)平面平行传播光的情况下报告了室温量子限制斯塔克效应,适用于集成光子学。为了从光学传输测量中研究不同反向偏置电压下的吸收光谱,在 p-i-n 二极管中制造了平面波导。对于 TE 和 TM 两种偏振,清楚地观察到 Ge/SiGe MQWs 吸收光谱的偏振依赖性。对于 TE 偏振,平面波导在很宽的光谱范围内表现出高消光比和低插入损耗。