School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore.
Opt Lett. 2011 May 15;36(10):1884-6. doi: 10.1364/OL.36.001884.
In this Letter, the optical properties of randomly positioned silicon nanowire arrays are studied. The result shows that position randomization with a filling ratio larger than 36% renders better absorptance over a broadband ranging from 300 to 1130 nm compared to regular structures. The ultimate efficiency of a 48% filling ratio position randomized nanowire structure is 13.4% higher compared to the optimized regularly arranged nanowire structure with the same thickness. The absorptance enhancement of random structures is attributed to lowered reflectance, more supported resonant modes, and broadening of existing resonance.
在这封信件中，研究了随机位置硅纳米线阵列的光学性质。结果表明，与规则结构相比，填充率大于 36%的位置随机化可在 300 至 1130nm 的宽带范围内提供更好的吸收率。与具有相同厚度的优化规则排列纳米线结构相比，填充率为 48%的位置随机化纳米线结构的最终效率提高了 13.4%。随机结构的吸收率增强归因于反射率降低、更多支持的共振模式和现有共振的展宽。
