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用拉曼光谱研究 Ce1-xMxO2-δ(x = 0.2)固溶体中的缺陷位。

Study of defect sites in Ce1-xMxO2-δ (x = 0.2) solid solutions using Raman spectroscopy.

机构信息

Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Institute of Physical Chemistry, Zhejiang Normal University, Jinhua 321004, China.

出版信息

J Phys Chem A. 2011 Jul 14;115(27):7972-7. doi: 10.1021/jp203921m. Epub 2011 Jun 16.

DOI:10.1021/jp203921m
PMID:21634801
Abstract

A series of Ce(1-x)M(x)O(2-δ) (M = Gd, Zr, La, Sm, Y, Lu, and Pr) samples were characterized by Raman spectroscopy to investigate the evolution of defect sites (oxygen vacancies and MO(8)-type complex) and their distributions in the samples. It was found that the evolution of oxygen vacancies was due to the different ionic valence state of dopant from that of Ce(4+), while the evolution of the MO(8)-type complex was due to the different ionic radius of dopant from that of Ce(4+). The distributions of defect sites were investigated using 325 and 514 nm excitation laser lines, indicating that the defect sites were surface enriched. Moreover, the increasing ordering level of the sample led to a decline in the concentration of the MO(8)-type complex in the sample but the constant concentration of oxygen vacancies, implying that the metastable MO(8)-type complex species were more disordered compared to the oxygen vacancies.

摘要

一系列 Ce(1-x)M(x)O(2-δ)(M=Gd、Zr、La、Sm、Y、Lu 和 Pr)样品通过拉曼光谱进行了表征,以研究缺陷位(氧空位和 MO(8)-型络合物)及其在样品中的分布的演变。结果表明,氧空位的演变是由于掺杂剂的离子价态与 Ce(4+)不同,而 MO(8)-型络合物的演变是由于掺杂剂的离子半径与 Ce(4+)不同。通过 325 和 514nm 激发激光线研究了缺陷位的分布,表明缺陷位在表面富集。此外,样品的有序度增加导致样品中 MO(8)-型络合物的浓度下降,但氧空位的浓度保持不变,这表明与氧空位相比,亚稳态 MO(8)-型络合物物种更加无序。

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