Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany.
Nano Lett. 2011 Jul 13;11(7):2814-8. doi: 10.1021/nl201178d. Epub 2011 Jun 6.
InAs with an extremely high electron mobility (up to 40,000 cm(2)/V s) seems to be the most suitable candidate for better electronic devices performance. Here we present a synthesis of inverted crystalline InAs nanopyramids (NPs) in silicon using a combined hot ion implantation and millisecond flash lamp annealing techniques. Conventional selective etching was used to form the InAs/Si heterojunction. The current-voltage measurement confirms the heterojunction diode formation with the ideality factor of η = 4.6. Kelvin probe force microscopy measurements indicate a type-II band alignment of n-type InAs NPs on p-type silicon. The main advantage of our method is its integration with large-scale silicon technology, which also allows applying it for Si-based electronic devices.
具有极高电子迁移率（高达 40000cm²/Vs）的 InAs 似乎是提高电子器件性能的最佳候选材料。在这里，我们使用离子注入和纳秒级闪光灯退火技术在硅衬底上合成了倒置的 InAs 纳米金字塔（NPs）。采用常规的选择性刻蚀技术形成 InAs/Si 异质结。电流-电压测量证实了具有理想因子 η = 4.6 的异质结二极管的形成。开尔文探针力显微镜测量表明，n 型 InAs NPs 在 p 型硅上的能带排列为 II 型。我们的方法的主要优点是与大规模硅技术的集成，这也允许将其应用于基于 Si 的电子器件。
