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砷化铟纳米线晶体管作为气体传感器及其响应机制。

InAs nanowire transistors as gas sensor and the response mechanism.

机构信息

Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, USA.

出版信息

Nano Lett. 2009 Dec;9(12):4348-51. doi: 10.1021/nl902611f.

DOI:10.1021/nl902611f
PMID:19739664
Abstract

We report a study of the response of InAs nanowire field-effect transistor sensor devices to various gases and alcoholic vapors. It is concluded that the change in conductance of the device in response to chemical vapors is a combined result of both the charge transfer and modified electron mobility effects. In particular, we found that surface adsorption of most chemical molecules can reduce electron density in nanowires from approximately 10(4) to approximately 10(3)/microm and enhance the electron mobility greatly (from tens to a few hundred of cm(2)/(V s)) at the same time. These effects are attributed to the interactions between adsorbed molecules and the electron accumulation layer and rich surface states on the InAs nanowire surface.

摘要

我们报告了对 InAs 纳米线场效应晶体管传感器器件对各种气体和酒精蒸气的响应的研究。研究结果表明,器件对化学蒸气的电导变化是电荷转移和电子迁移率变化的综合结果。特别是,我们发现大多数化学分子的表面吸附可以将纳米线中的电子密度从约 10(4)降低到约 10(3)/μm,并同时大大提高电子迁移率(从几十到几百 cm(2)/(V s))。这些效应归因于吸附分子与电子积累层和 InAs 纳米线表面丰富的表面态之间的相互作用。

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InAs nanowire transistors as gas sensor and the response mechanism.砷化铟纳米线晶体管作为气体传感器及其响应机制。
Nano Lett. 2009 Dec;9(12):4348-51. doi: 10.1021/nl902611f.
2
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