Institute of Solid State Physics, Semiconductor Epitaxy, University of Bremen, PO Box 330 440, D-28334 Bremen, Germany.
Nanotechnology. 2011 Jul 15;22(28):285204. doi: 10.1088/0957-4484/22/28/285204. Epub 2011 Jun 8.
Micropillars of different diameters have been prepared by focused ion beam milling out of a planar ZnTe-based cavity. The monolithic epitaxial structure, deposited on a GaAs substrate, contains CdTe quantum dots embedded in a ZnTe λ-cavity delimited by two distributed Bragg reflectors (DBRs). The high refractive index material of the DBR structure is ZnTe, while for the low index material a short-period triple MgTe/ZnTe/MgSe superlattice is used. The CdTe quantum dots are formed by a novel Zn-induced formation process and are investigated by scanning transmission electron microscopy. Micro-photoluminescence measurements show discrete optical modes for the pillars, in good agreement with calculations based on a vectorial transfer matrix method. The measured quality factor reaches a value of 3100.
通过聚焦离子束铣削从平面 ZnTe 基腔中制备出不同直径的微柱。这种整体式外延结构沉积在 GaAs 衬底上，包含嵌入在由两个分布式布拉格反射器 (DBR) 限定的 ZnTe λ 腔中的 CdTe 量子点。DBR 结构的高折射率材料为 ZnTe，而低折射率材料则使用短周期三 MgTe/ZnTe/MgSe 超晶格。CdTe 量子点是通过一种新的 Zn 诱导形成工艺形成的，并通过扫描透射电子显微镜进行了研究。微光致发光测量显示出支柱的离散光学模式，与基于矢量子转移矩阵方法的计算吻合良好。测量的品质因数达到 3100 的值。
