Schulz Wolfgang-Michael, Thomay Tim, Eichfelder Marcus, Bommer Moritz, Wiesner Michael, Rossbach Robert, Jetter Michael, Bratschitsch Rudolf, Leitenstorfer Alfred, Michler Peter
Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, D-70569 Stuttgart, Germany.
Opt Express. 2010 Jun 7;18(12):12543-51. doi: 10.1364/OE.18.012543.
Using focused ion beam etching techniques, micropillar cavities were fabricated from a high reflective AlAs/AlGaAs distributed Bragg reflector planar cavity containing self-assembled InP quantum dots in (Al(0.20)Ga(0.80))(0.51)In(0.49)P barrier layers. The mode spectra of pillars with different diameters were investigated using micro-photoluminescence, showing excellent agreement with theory. Quality factors of the pillar cavities up to 3650 were observed. Furthermore, for a microcavity pillar with 1.26 mum diameter, single-photon emission is demonstrated by performing photon correlation measurements under pulsed excitation.
利用聚焦离子束蚀刻技术，在（Al(0.20)Ga(0.80))(0.51)In(0.49)P势垒层中包含自组装InP量子点的高反射AlAs/AlGaAs分布布拉格反射器平面腔上制造了微柱腔。使用微光致发光研究了不同直径微柱的模式光谱，结果与理论高度吻合。观察到柱形腔的品质因数高达3650。此外，对于直径为1.26μm的微腔柱，通过在脉冲激发下进行光子相关性测量证明了单光子发射。
