Institute for NanoQuantum Information Electronics, the University of Tokyo, Meguro, Tokyo, Japan.
Opt Lett. 2013 Sep 1;38(17):3241-4. doi: 10.1364/OL.38.003241.
Numerical simulations were carried out on micropillar cavities consisting of Si/SiO2 distributed Bragg reflectors (DBRs) with an InP spacer layer. Owing to a large refractive index contrast of 2 in DBRs, cavities with just 4/6.5 top/bottom DBR pairs that give a low pillar height (4.5 μm), have noticeable Purcell-enhancement effect in the 1.55-μm band. With careful designs on cavities with diameters of ~2.30 μm, a quality factor of up to 3300, a nominal Purcell factor of up to 110, and an output efficiency of ~60% are obtainable. These results ensure improvement of operation frequency and enhancement of photon indistinguishability for 1.55-μm single photon sources based on InAs/InP quantum dots.
对由具有 InP 间隔层的 Si/SiO2 分布布拉格反射器 (DBR) 组成的微柱腔进行了数值模拟。由于 DBR 中的折射率对比约为 2，因此具有仅 4/6.5 个顶部/底部 DBR 对的低柱高 (~4.5 μm) 的腔在 1.55-μm 波段具有明显的 Purcell 增强效应。通过对直径约为 2.30 μm 的腔进行精心设计，可以获得高达 3300 的品质因数、高达 110 的标称 Purcell 因子和高达 60%的输出效率。这些结果确保了基于 InAs/InP 量子点的 1.55-μm 单光子源的工作频率提高和光子不可分辨性增强。
