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蜘蛛呋咱尼丁-IV 抑制域 II 和 IV 钠通道电压传感器的常见分子决定因素。

Common molecular determinants of tarantula huwentoxin-IV inhibition of Na+ channel voltage sensors in domains II and IV.

机构信息

Department of Pharmacology and Toxicology, Indiana University School of Medicine, Indianapolis, Indiana 46202, USA.

出版信息

J Biol Chem. 2011 Aug 5;286(31):27301-10. doi: 10.1074/jbc.M111.246876. Epub 2011 Jun 9.

Abstract

The voltage sensors of domains II and IV of sodium channels are important determinants of activation and inactivation, respectively. Animal toxins that alter electrophysiological excitability of muscles and neurons often modify sodium channel activation by selectively interacting with domain II and inactivation by selectively interacting with domain IV. This suggests that there may be substantial differences between the toxin-binding sites in these two important domains. Here we explore the ability of the tarantula huwentoxin-IV (HWTX-IV) to inhibit the activity of the domain II and IV voltage sensors. HWTX-IV is specific for domain II, and we identify five residues in the S1-S2 (Glu-753) and S3-S4 (Glu-811, Leu-814, Asp-816, and Glu-818) regions of domain II that are crucial for inhibition of activation by HWTX-IV. These data indicate that a single residue in the S3-S4 linker (Glu-818 in hNav1.7) is crucial for allowing HWTX-IV to interact with the other key residues and trap the voltage sensor in the closed configuration. Mutagenesis analysis indicates that the five corresponding residues in domain IV are all critical for endowing HWTX-IV with the ability to inhibit fast inactivation. Our data suggest that the toxin-binding motif in domain II is conserved in domain IV. Increasing our understanding of the molecular determinants of toxin interactions with voltage-gated sodium channels may permit development of enhanced isoform-specific voltage-gating modifiers.

摘要

钠通道域 II 和 IV 的电压传感器分别是激活和失活的重要决定因素。改变肌肉和神经元电生理兴奋性的动物毒素,通常通过选择性地与域 II 相互作用来改变钠通道的激活,通过选择性地与域 IV 相互作用来改变失活。这表明这两个重要域中的毒素结合位点可能存在很大差异。在这里,我们探索了狼蛛 Huwentoxin-IV(HWTX-IV)抑制域 II 和 IV 电压传感器活性的能力。HWTX-IV 特异性地作用于域 II,我们确定了 S1-S2(Glu-753)和 S3-S4(Glu-811、Leu-814、Asp-816 和 Glu-818)区域中五个残基(S2-S1 中的 Glu-753 和 S3-S4 中的 Glu-811、Leu-814、Asp-816 和 Glu-818)对于抑制 HWTX-IV 激活至关重要。这些数据表明,S3-S4 连接环中的单个残基(hNav1.7 中的 Glu-818)对于允许 HWTX-IV 与其他关键残基相互作用并将电压传感器捕获在关闭构象中至关重要。突变分析表明,域 IV 中的五个相应残基对于赋予 HWTX-IV 抑制快速失活的能力都是至关重要的。我们的数据表明,域 II 中的毒素结合基序在域 IV 中是保守的。增加我们对毒素与电压门控钠通道相互作用的分子决定因素的理解,可能会促进增强型同工型特异性电压门控修饰剂的开发。

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