Advanced Science Institute, RIKEN, 2-1 Hirosawa, Wako 351-0198, Japan.
Nat Mater. 2011 Jun 12;10(7):527-31. doi: 10.1038/nmat3046.
The non-local spin injection in lateral spin valves is strongly expected to be an effective method to generate a pure spin current for potential spintronic application. However, the spin-valve voltage, which determines the magnitude of the spin current flowing into an additional ferromagnetic wire, is typically of the order of 1 μV. Here we show that lateral spin valves with low-resistivity NiFe/MgO/Ag junctions enable efficient spin injection with high applied current density, which leads to the spin-valve voltage increasing 100-fold. Hanle effect measurements demonstrate a long-distance collective 2π spin precession along a 6-μm-long Ag wire. These results suggest a route to faster and manipulable spin transport for the development of pure spin-current-based memory, logic and sensing devices.
横向自旋阀中的非局域自旋注入有望成为一种有效的方法，可用于产生纯自旋流，从而应用于潜在的自旋电子学。然而，决定流入附加铁磁线中自旋电流大小的自旋阀电压通常约为 1μV。在这里，我们展示了具有低电阻 NiFe/MgO/Ag 结的横向自旋阀可以在高电流密度下实现高效的自旋注入，从而使自旋阀电压增加 100 倍。Hanle 效应测量表明，在 6μm 长的 Ag 线中存在长程集体 2π 自旋进动。这些结果为基于纯自旋电流的存储器、逻辑和传感器件的发展提供了更快和可控制的自旋输运途径。
