• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

实现纯自旋流中的相干自旋进动。

Towards coherent spin precession in pure-spin current.

机构信息

Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan.

出版信息

Sci Rep. 2012;2:628. doi: 10.1038/srep00628. Epub 2012 Sep 4.

DOI:10.1038/srep00628
PMID:22953049
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3432863/
Abstract

Non-local spin injection in lateral spin valves generates a pure spin current which is a diffusive flow of spins (i.e. spin angular momentums) with no net charge flow. The diffusive spins lose phase coherency in precession while undergoing frequent collisions and these events lead to a broad distribution of the dwell time in a transport channel between the injector and the detector. Here we show the lateral spin-valves with dual injectors enable us to detect a genuine in-plane precession signal from the Hanle effect, demonstrating the phase coherency in the in-plane precession is improved with an increase of the channel length. The coherency in the spin precession shows a universal behavior as a function of the normalized separation between the injector and the detector in material-independent fashion for metals and semiconductors including graphene.

摘要

横向自旋阀中的非局域自旋注入产生纯自旋流,它是自旋(即自旋角动量)的扩散流,没有净电荷流。扩散的自旋在进动过程中由于频繁的碰撞而失去相位相干性,这些事件导致在注入器和探测器之间的输运通道中的停留时间分布很宽。在这里,我们展示了具有双注入器的横向自旋阀能够使我们从 Hanle 效应中检测到真正的面内进动信号,证明了随着通道长度的增加,面内进动的相位相干性得到了提高。自旋进动的相干性表现出一种普遍的行为,作为注入器和探测器之间的归一化分离的函数,对于包括石墨烯在内的金属和半导体等材料是独立的。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0880/3432863/a7fedfde495a/srep00628-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0880/3432863/3a97bff26402/srep00628-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0880/3432863/5394dff7eaa4/srep00628-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0880/3432863/ba3e5a4a584b/srep00628-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0880/3432863/a7fedfde495a/srep00628-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0880/3432863/3a97bff26402/srep00628-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0880/3432863/5394dff7eaa4/srep00628-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0880/3432863/ba3e5a4a584b/srep00628-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0880/3432863/a7fedfde495a/srep00628-f4.jpg

相似文献

1
Towards coherent spin precession in pure-spin current.实现纯自旋流中的相干自旋进动。
Sci Rep. 2012;2:628. doi: 10.1038/srep00628. Epub 2012 Sep 4.
2
Electrical detection of spin precession in a metallic mesoscopic spin valve.金属介观自旋阀中自旋进动的电学检测。
Nature. 2002 Apr 18;416(6882):713-6. doi: 10.1038/416713a.
3
Strong and Tunable Spin-Lifetime Anisotropy in Dual-Gated Bilayer Graphene.双栅双层石墨烯中强且可调的自旋寿命各向异性。
Phys Rev Lett. 2018 Sep 21;121(12):127703. doi: 10.1103/PhysRevLett.121.127703.
4
Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves.金属横向自旋阀中自旋积累和长程自旋进动的巨大增强。
Nat Mater. 2011 Jun 12;10(7):527-31. doi: 10.1038/nmat3046.
5
Electrical injection and detection of spin accumulation in silicon at 500 K with magnetic metal/silicon dioxide contacts.在 500K 下通过金属/二氧化硅磁控硅接触实现硅中自旋积累的电注入和检测。
Nat Commun. 2011;2:245. doi: 10.1038/ncomms1256.
6
Pure Spin Currents Driven by Colossal Spin-Orbit Coupling on Two-Dimensional Surface Conducting SrTiO.二维表面导电SrTiO₃上巨自旋轨道耦合驱动的纯自旋电流
Nano Lett. 2021 Aug 11;21(15):6511-6517. doi: 10.1021/acs.nanolett.1c01607. Epub 2021 Jul 28.
7
Observation of Antiferromagnetic Magnon Pseudospin Dynamics and the Hanle Effect.反铁磁磁振子赝自旋动力学及汉勒效应的观测
Phys Rev Lett. 2020 Dec 11;125(24):247204. doi: 10.1103/PhysRevLett.125.247204.
8
Anisotropic spin relaxation in graphene.石墨烯中的各向异性自旋弛豫
Phys Rev Lett. 2008 Jul 25;101(4):046601. doi: 10.1103/PhysRevLett.101.046601.
9
Localized states influence spin transport in epitaxial graphene.局域态影响外延石墨烯中的自旋输运。
Phys Rev Lett. 2013 Feb 8;110(6):067209. doi: 10.1103/PhysRevLett.110.067209. Epub 2013 Feb 6.
10
Diode effect in the lateral spin valve.
J Phys Condens Matter. 2020 Feb 27;32(9):095303. doi: 10.1088/1361-648X/ab5769. Epub 2019 Nov 13.

引用本文的文献

1
Enhanced tunnel spin injection into graphene using chemical vapor deposited hexagonal boron nitride.利用化学气相沉积法制备的六方氮化硼增强向石墨烯中的隧穿自旋注入。
Sci Rep. 2014 Aug 26;4:6146. doi: 10.1038/srep06146.

本文引用的文献

1
Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves.金属横向自旋阀中自旋积累和长程自旋进动的巨大增强。
Nat Mater. 2011 Jun 12;10(7):527-31. doi: 10.1038/nmat3046.
2
Tunneling spin injection into single layer graphene.隧穿自旋注入单层石墨烯。
Phys Rev Lett. 2010 Oct 15;105(16):167202. doi: 10.1103/PhysRevLett.105.167202. Epub 2010 Oct 12.
3
Electronic spin drift in graphene field-effect transistors.
Phys Rev Lett. 2008 Jun 13;100(23):236603. doi: 10.1103/PhysRevLett.100.236603.
4
Coherent spin transport through a 350 micron thick silicon wafer.通过一块350微米厚的硅片实现的相干自旋输运。
Phys Rev Lett. 2007 Oct 26;99(17):177209. doi: 10.1103/PhysRevLett.99.177209.
5
The emergence of spin electronics in data storage.自旋电子学在数据存储中的出现。
Nat Mater. 2007 Nov;6(11):813-23. doi: 10.1038/nmat2024.
6
Electronic spin transport and spin precession in single graphene layers at room temperature.室温下单层石墨烯中的电子自旋输运与自旋进动
Nature. 2007 Aug 2;448(7153):571-4. doi: 10.1038/nature06037. Epub 2007 Jul 15.
7
Direct electronic measurement of the spin Hall effect.自旋霍尔效应的直接电子测量。
Nature. 2006 Jul 13;442(7099):176-9. doi: 10.1038/nature04937.
8
Electrical detection of spin precession in a metallic mesoscopic spin valve.金属介观自旋阀中自旋进动的电学检测。
Nature. 2002 Apr 18;416(6882):713-6. doi: 10.1038/416713a.
9
Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve.全金属介观自旋阀中室温下的电自旋注入与积累。
Nature. 2001 Mar 15;410(6826):345-8. doi: 10.1038/35066533.
10
Boundary resistance of the ferromagnetic-nonferromagnetic metal interface.铁磁-非铁磁金属界面的边界电阻。
Phys Rev Lett. 1987 May 25;58(21):2271-2273. doi: 10.1103/PhysRevLett.58.2271.