Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.
Phys Rev Lett. 2011 May 20;106(20):207601. doi: 10.1103/PhysRevLett.106.207601.
We have measured the electrically detected magnetic resonance of donor-doped silicon field-effect transistors in resonant X- (9.7 GHz) and W-band (94 GHz) microwave cavities. The two-dimensional electron gas resonance signal increases by 2 orders of magnitude from X to W band, while the donor resonance signals are enhanced by over 1 order of magnitude. Bolometric effects and spin-dependent scattering are inconsistent with the observations. We propose that polarization transfer from the donor to the two-dimensional electron gas is the main mechanism giving rise to the spin resonance signals.
我们已经在共振 X-（9.7GHz）和 W-波段（94GHz）微波腔中测量了施主掺杂硅场效应晶体管的电检测磁共振。从 X 波段到 W 波段，二维电子气共振信号增加了两个数量级，而施主共振信号增强了一个数量级以上。测辐射热计效应和自旋相关散射与观察结果不一致。我们提出，从施主到二维电子气的极化转移是导致自旋共振信号的主要机制。
