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硒化锗电子与光学性质的从头算计算

Ab initio calculations of the electronic and optical properties of germanium selenide.

作者信息

Makinistian L, Albanesi E A

机构信息

Facultad de Ingeniería, Universidad Nacional de Entre Ríos, 3101 Oro Verde (ER), Argentina.

出版信息

J Phys Condens Matter. 2007 May 8;19(18):186211. doi: 10.1088/0953-8984/19/18/186211. Epub 2007 Apr 5.

Abstract

We have performed an ab initio calculation of the germanium selenide electronic structure, adopting the LDA and GGA approximations for the exchange-correlation potential within the DFT. These calculations have been carried out with and without the inclusion of the spin-orbit interaction. The subtle changes it produces in the band structure, the density of states and the optical properties have been discussed. Also, we propose the s-Ge state contribution at the edge of the valence band as having an important role. Based on our electronic structure, we discuss germanium selenide experimental core spectra and optical properties. We found excellent agreement between our results and available experimental core spectra data, and our calculated optical functions of GeSe explain the origin of the optical transitions, comparing them satisfactorily against existing experimental data.

摘要

我们采用密度泛函理论(DFT)中交换关联势的局域密度近似(LDA)和广义梯度近似(GGA),对硒化锗的电子结构进行了从头计算。这些计算在包含和不包含自旋轨道相互作用的情况下均已开展。文中讨论了自旋轨道相互作用在能带结构、态密度和光学性质方面所产生的细微变化。此外,我们提出价带边缘处的s-Ge态贡献具有重要作用。基于我们的电子结构,我们讨论了硒化锗的实验芯能级光谱和光学性质。我们发现我们的结果与现有的实验芯能级光谱数据高度吻合,并且我们计算得到的GeSe光学函数解释了光学跃迁的起源,与现有的实验数据进行比较时结果令人满意。

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