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声子介导的 InGaAs/GaAs 量子点激子与光子晶体腔的耦合。

Phonon-mediated coupling of InGaAs/GaAs quantum-dot excitons to photonic crystal cavities.

机构信息

Laboratory of Physics of Nanostructures, Ecole Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.

出版信息

Phys Rev Lett. 2011 Jun 3;106(22):227402. doi: 10.1103/PhysRevLett.106.227402. Epub 2011 Jun 1.

DOI:10.1103/PhysRevLett.106.227402
PMID:21702633
Abstract

We demonstrate that the emission characteristics of site-controlled InGaAs/GaAs single quantum dots embedded in photonic crystal slab cavities correspond to single confined excitons coupled to cavity modes, unlike previous reports of similar systems based on self-assembled quantum dots. By using polarization-resolved photoluminescence spectroscopy at different temperatures and a theoretical model, we show that the exciton-cavity interaction range is limited to the phonon sidebands. Photon-correlation and pump-power dependence experiments under nonresonant excitation conditions further establish that the cavity is fed only by a single exciton.

摘要

我们证明了嵌入在光子晶体平板腔中的局域化 InGaAs/GaAs 单量子点的发射特性对应于与腔模耦合的单个受限激子,这与以前基于自组装量子点的类似系统的报告不同。通过在不同温度下使用偏振分辨光致发光光谱和理论模型,我们表明激子-腔相互作用范围限于声子边带。在非共振激发条件下的光子相关和泵浦功率依赖实验进一步证实,腔仅由单个激子提供。

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Phys Rev Lett. 2011 Jun 3;106(22):227402. doi: 10.1103/PhysRevLett.106.227402. Epub 2011 Jun 1.
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