Jo Masafumi, Duan Guotao, Mano Takaaki, Sakoda Kazuaki
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
Nanoscale Res Lett. 2011 Jan 12;6(1):76. doi: 10.1186/1556-276X-6-76.
We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350°C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200°C-capped sample.
我们研究了低温覆盖（200 - 450°C）对GaAs/AlGaAs量子阱光学性质的影响。光致发光测量清楚地表明，在200°C生长的AlGaAs覆盖层中形成了大量非辐射复合中心，而与高温覆盖层相比，在高于350°C生长的AlGaAs覆盖层中光学质量略有下降。此外，除了200°C覆盖的样品外，生长后退火可以恢复光学质量且没有任何结构变化。
