用于具有等离子体光耦合的单光子源的位置可检索低密度砷化镓液滴外延量子点的结构和光学性质

Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling.

作者信息

Lee Eun-Hye, Song Jin-Dong, Han Il-Ki, Chang Soo-Kyung, Langer Fabian, Höfling Sven, Forchel Alfred, Kamp Martin, Kim Jong-Su

机构信息

Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul, 136-791 South Korea ; Institute of Physics and Applied Physics, Yonsei University, Seoul, 120-749 South Korea.

Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul, 136-791 South Korea.

出版信息

Nanoscale Res Lett. 2015 Mar 10;10:114. doi: 10.1186/s11671-015-0826-2. eCollection 2015.

DOI:10.1186/s11671-015-0826-2

PMID:25852409

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4385222/

Abstract

The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm(2)), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.

摘要

通过低密度液滴外延（DE）（约4个量子点/μm²）生长的单个具有光学活性的砷化镓量子点（QD）的位置，在45纳米厚的Al0.3Ga0.7As覆盖层表面被直接观测到。AlGaAs覆盖层的薄厚度对于具有等离子体光耦合的单光子源很有用。砷化镓DE量子点的微光致发光在1.654至1.657电子伏特范围内表现出激子/双激子行为。直接观测低密度砷化镓DE量子点的位置对于使用单个量子点的器件（如单光子源）的大规模制造将是有利的。