Lee Eun-Hye, Song Jin-Dong, Han Il-Ki, Chang Soo-Kyung, Langer Fabian, Höfling Sven, Forchel Alfred, Kamp Martin, Kim Jong-Su
Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul, 136-791 South Korea ; Institute of Physics and Applied Physics, Yonsei University, Seoul, 120-749 South Korea.
Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul, 136-791 South Korea.
Nanoscale Res Lett. 2015 Mar 10;10:114. doi: 10.1186/s11671-015-0826-2. eCollection 2015.
The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm(2)), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.
通过低密度液滴外延（DE）（约4个量子点/μm²）生长的单个具有光学活性的砷化镓量子点（QD）的位置，在45纳米厚的Al0.3Ga0.7As覆盖层表面被直接观测到。AlGaAs覆盖层的薄厚度对于具有等离子体光耦合的单光子源很有用。砷化镓DE量子点的微光致发光在1.654至1.657电子伏特范围内表现出激子/双激子行为。直接观测低密度砷化镓DE量子点的位置对于使用单个量子点的器件（如单光子源）的大规模制造将是有利的。
