Novikau Andrei, Gaiduk Peter, Maksimova Ksenia, Zenkevich Andrei
Belarusian State University, 4 prosp, Nezavisimosti, 220030, Minsk, Belarus.
Nanoscale Res Lett. 2011 Feb 16;6(1):148. doi: 10.1186/1556-276X-6-148.
A two-dimensional layers of metal (Me) nanocrystals embedded in SiO2 were produced by pulsed laser deposition of uniformly mixed Si:Me film followed by its furnace oxidation and rapid thermal annealing. The kinetics of the film oxidation and the structural properties of the prepared samples were investigated by Rutherford backscattering spectrometry, and transmission electron microscopy, respectively. The electrical properties of the selected SiO2:Me nanocomposite films were evaluated by measuring C-V and I-V characteristics on a metal-oxide-semiconductor stack. It is found that Me segregation induced by Si:Me mixture oxidation results in the formation of a high density of Me and silicide nanocrystals in thin film SiO2 matrix. Strong evidence of oxidation temperature as well as impurity type effect on the charge storage in crystalline Me-nanodot layer is demonstrated by the hysteresis behavior of the high-frequency C-V curves.
通过脉冲激光沉积均匀混合的Si:Me薄膜，随后进行炉内氧化和快速热退火，制备了嵌入SiO2中的二维金属（Me）纳米晶体层。分别通过卢瑟福背散射光谱法和透射电子显微镜研究了薄膜氧化动力学和制备样品的结构特性。通过测量金属氧化物半导体堆栈的C-V和I-V特性，评估了所选SiO2:Me纳米复合薄膜的电学性能。研究发现，Si:Me混合物氧化引起的Me偏析导致在薄膜SiO2基体中形成高密度的Me和硅化物纳米晶体。高频C-V曲线的滞后行为证明了氧化温度以及杂质类型对晶体Me纳米点层中电荷存储的强烈影响。
