Dózsa László, Molnár György, Raineri Vito, Giannazzo Filippo, Ferencz János, Lányi Stefan
Research Institute for Technical Physics and Materials Sciences, P,O, 49, H-1525 Budapest, Hungary.
Nanoscale Res Lett. 2011 Feb 14;6(1):140. doi: 10.1186/1556-276X-6-140.
Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS) were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM) were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.
通过将铁反应沉积外延到硅上制备了自组装硅化铁纳米结构。使用电容 - 电压、电流 - 电压和深能级瞬态谱（DLTS）来测量金/硅肖特基结的电学性质。采用扩展电阻和扫描探针电容显微镜（SCM）来测量局部电学性质。使用前置放大器将DLTS的灵敏度令人满意地提高，以测量扫描尖端半导体结的瞬态。在铁沉积区域，与铁相关的缺陷在约0.5μm深度的表层占主导。这些缺陷使肖特基结特性恶化。在铁沉积区域之外，在靠近表面的薄层中确定了与铁相关的缺陷浓度。该区域的缺陷瞬态在宏观肖特基结中以及通过扫描尖端DLTS进行了测量，并通过SCM中的偏置调制频率依赖性进行了检测。
