Fiorenza Patrick, Lo Nigro Raffaella, Raineri Vito
Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche, Strada VIII, 5; 95121 Catania, Italy.
Nanoscale Res Lett. 2011 Feb 4;6(1):118. doi: 10.1186/1556-276X-6-118.
The conductive atomic force microscopy provided a local characterization of the dielectric heterogeneities in CaCu3Ti4O12 (CCTO) thin films deposited by MOCVD on IrO2 bottom electrode. In particular, both techniques have been employed to clarify the role of the inter- and sub-granular features in terms of conductive and insulating regions. The microstructure and the dielectric properties of CCTO thin films have been studied and the evidence of internal barriers in CCTO thin films has been provided. The role of internal barriers and the possible explanation for the extrinsic origin of the giant dielectric response in CCTO has been evaluated.
导电原子力显微镜对通过金属有机化学气相沉积（MOCVD）法沉积在二氧化铱底部电极上的CaCu3Ti4O12（CCTO）薄膜中的介电不均匀性进行了局部表征。特别是，这两种技术都被用于阐明晶间和亚颗粒特征在导电和绝缘区域方面的作用。研究了CCTO薄膜的微观结构和介电性能，并提供了CCTO薄膜内部势垒的证据。评估了内部势垒的作用以及对CCTO中巨大介电响应的非本征起源的可能解释。
