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石墨烯和Z2拓扑绝缘体的平带边缘模式。

Flat edge modes of graphene and of Z2 topological insulator.

作者信息

Imura Ken-Ichiro, Mao Shijun, Yamakage Ai, Kuramoto Yoshio

机构信息

Department of Quantum Matter, AdSM, Hiroshima University, Higashi-Hiroshima, 739-8530, Japan.

出版信息

Nanoscale Res Lett. 2011 Apr 21;6(1):358. doi: 10.1186/1556-276X-6-358.

Abstract

A graphene nano-ribbon in the zigzag edge geometry exhibits a specific type of gapless edge modes with a partly flat band dispersion. We argue that the appearance of such edge modes are naturally understood by regarding graphene as the gapless limit of a Z2 topological insulator. To illustrate this idea, we consider both Kane-Mele (graphene-based) and Bernevig-Hughes-Zhang models: the latter is proposed for HgTe/CdTe 2D quantum well. Much focus is on the role of valley degrees of freedom, especially, on how they are projected onto and determine the 1D edge spectrum in different edge geometries.

摘要

锯齿形边缘几何结构的石墨烯纳米带呈现出一种特定类型的无隙边缘模式,其能带色散部分平坦。我们认为,通过将石墨烯视为Z2拓扑绝缘体的无隙极限,可以自然地理解这种边缘模式的出现。为了说明这一观点,我们考虑了凯恩 - 梅勒(基于石墨烯)模型和贝纳维格 - 休斯 - 张模型:后者是针对HgTe/CdTe二维量子阱提出的。研究重点主要在于谷自由度的作用,特别是它们如何投影到不同边缘几何结构中的一维边缘谱上并对其进行确定。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ca61/3211448/3a16fe41c77c/1556-276X-6-358-1.jpg

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