SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China.
J Phys Condens Matter. 2012 Dec 19;24(50):505602. doi: 10.1088/0953-8984/24/50/505602. Epub 2012 Nov 21.
We propose a simple method for generating a spin-polarized current in a two-dimensional topological insulator. As z-component magnetic impurities exist on one edge of the Kane-Mele model, a subgap is opened in the corresponding pair of edge states, but another pair of gapless edge states is still protected by the time reversal symmetry. Thus the conductance plateau with the value e(2)/h in the subgap corresponds to a single-edge and spin-polarized current. We also find that the spin-polarized current is insensitive to weak non-magnetic disorder. This mechanism for generating spin-polarized currents is independent of the concrete theoretical model and can be generalized to two-dimensional topological insulators, such as HgTe/CdTe quantum wells and silicene nanoribbons.
我们提出了一种在二维拓扑绝缘体中产生自旋极化电流的简单方法。由于 Kane-Mele 模型的一条边缘上存在 z 分量磁杂质,相应的一对边缘态中会出现能隙,但另一对无能隙边缘态仍受到时间反演对称性的保护。因此,在能隙中电导平台的值为 e(2)/h,对应于单边缘和自旋极化电流。我们还发现,自旋极化电流对弱非磁性无序不敏感。这种产生自旋极化电流的机制不依赖于具体的理论模型,可以推广到二维拓扑绝缘体,如 HgTe/CdTe 量子阱和硅烯纳米带。