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辅助干燥防止高纵横比纳米结构中的图案塌陷。

Auxiliary drying to prevent pattern collapse in high aspect ratio nanostructures.

机构信息

National Synchrotron Radiation Laboratory (NSRL), University of Science and Technology of China, Hefei, Anhui, People's Republic of China.

出版信息

Nanotechnology. 2011 Jul 29;22(30):305305. doi: 10.1088/0957-4484/22/30/305305. Epub 2011 Jul 1.

Abstract

Many defects are generated in densely packed high aspect ratio structures during nanofabrication. Pattern collapse is one of the serious problems that may arise, mainly due to the capillary force during drying after the rinsing process. In this paper, a method of auxiliary drying is presented to prevent pattern collapse in high aspect ratio nanostructures by adding an auxiliary substrate as a reinforcing rib to restrict deformation and to balance the capillary force. The principle of the method is presented based on the analysis of pattern collapse. A finite element method is then applied to analyze the deformation of the resist beams caused by the surface tension using the ANSYS software, and the effect of the nanostructure's length to width ratio simulated and analyzed. Finally, the possible range of applications based on the proposed method is discussed. Our results show that the aspect ratio may be increased 2.6 times without pattern collapse; furthermore, this method can be widely used in the removal of solvents in micro- and nanofabrication.

摘要

在纳米制造过程中,高密度高纵横比结构中会产生许多缺陷。图案塌陷是可能出现的严重问题之一,主要是由于冲洗后干燥过程中的毛细力。本文提出了一种辅助干燥方法,通过添加辅助衬底作为加强肋来防止高纵横比纳米结构中的图案塌陷,以限制变形和平衡毛细力。该方法的原理是基于对图案塌陷的分析提出的。然后,使用 ANSYS 软件通过有限元方法分析由表面张力引起的抗蚀剂梁的变形,并模拟和分析纳米结构长径比的影响。最后,讨论了基于所提出方法的可能应用范围。我们的结果表明,在不发生图案塌陷的情况下,纵横比可以增加 2.6 倍;此外,该方法可以广泛应用于微纳制造中的溶剂去除。

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