Department of Chemistry, Michigan State University, East Lansing, Michigan 48840, United States.
ACS Appl Mater Interfaces. 2011 Aug;3(8):3042-8. doi: 10.1021/am200560g. Epub 2011 Jul 18.
Atom transfer radical polymerization (ATRP) is commonly used to grow polymer brushes from Au surfaces, but the resulting film thicknesses are usually significantly less than with ATRP from SiO(2) substrates. On Au, growth of poly(methyl methacrylate) (PMMA) blocks from poly(tert-butyl acrylate) brushes occurs more rapidly than growth of PMMA from initiator monolayers, suggesting that the disparity between growth rates from Au and SiO(2) stems from the Au surface. Radical quenching by electron transfer from Au is probably not the termination mechanism because polymerization from thin, cross-linked initiators gives film thicknesses that are essentially the same as the thicknesses of films grown from SiO(2) under the same polymerization conditions. However, this result is consistent with termination through desorption of thiols from noncross-linked films, and reaction of these thiols with growing polymer chains. The enhanced stability of cross-linked initiators allows ATRP at temperatures up to ∼100 °C and enables the growth of thick films of PMMA (350 nm), polystyrene (120 nm) and poly(vinyl pyridine) (200 nm) from Au surfaces in 1 h. At temperatures >100 °C, the polymer brush layers delaminate as large area films.
原子转移自由基聚合(ATRP)通常用于从 Au 表面生长聚合物刷,但得到的薄膜厚度通常明显小于从 SiO2 基底进行 ATRP。在 Au 上,从聚(叔丁基丙烯酸酯)刷生长聚甲基丙烯酸甲酯(PMMA)块比从引发剂单层生长 PMMA 快,这表明 Au 和 SiO2 之间的生长速率差异源于 Au 表面。由于从薄交联引发剂聚合得到的薄膜厚度与在相同聚合条件下从 SiO2 生长的薄膜厚度基本相同,因此电子从 Au 转移的自由基猝灭不太可能是终止机制。然而,这一结果与从非交联膜中硫醇解吸以及这些硫醇与生长聚合物链反应的终止机制一致。交联引发剂的增强稳定性允许在高达约 100°C 的温度下进行 ATRP,并能够在 1 小时内在 Au 表面生长厚的 PMMA(350nm)、聚苯乙烯(120nm)和聚(吡啶)(200nm)薄膜。在温度高于 100°C 时,聚合物刷层会分层形成大面积薄膜。