Lin Dandan, Wu Hui, Zhang Rui, Pan Wei
State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China.
Nanotechnology. 2007 Nov 21;18(46):465301. doi: 10.1088/0957-4484/18/46/465301. Epub 2007 Oct 17.
Well-aligned tin-doped indium (ITO) nanowires have been prepared using the electrospinning process. The Sn doping mechanism and microstructure have been characterized by x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). Devices for I-V measurement and field-effect transistors (FETs) were assembled using ITO nanowires with top contact configurations. The effect of Sn doping on the electrical conductivity was significant in that it enhanced the conductance by over 10(7) times, up to ∼1 S cm(-1) for ITO nanowires with an Sn content of 17.5 at.%. The nanowire FETs were operated in the depletion mode with an electron mobility of up to 0.45 cm(2) V(-1) s(-1) and an on/off ratio of 10(3).
通过静电纺丝工艺制备了排列良好的锡掺杂铟（ITO）纳米线。利用X射线衍射（XRD）和X射线光电子能谱（XPS）对锡的掺杂机制和微观结构进行了表征。使用具有顶部接触配置的ITO纳米线组装了用于I-V测量的器件和场效应晶体管（FET）。锡掺杂对电导率的影响显著，对于锡含量为17.5原子%的ITO纳米线，其电导率提高了超过10^7倍，高达约1 S cm^(-1)。纳米线FET以耗尽模式工作，电子迁移率高达0.45 cm^(2) V^(-1) s^(-1)，开/关比为10^3。
