Burlacu A, Ursaki V V, Skuratov V A, Lincot D, Pauporte T, Elbelghiti H, Rusu E V, Tiginyanu I M
Laboratory of Low-Dimensional Semiconductor Structures, Institute of Applied Physics, Academy of Sciences of Moldova, 5 Academy Street, 2028 Chisinau, Moldova. National Center for Materials Study and Testing, Technical University of Moldova, 168 Stefan cel Mare Avenue, 2004 Chisinau, Moldova.
Nanotechnology. 2008 May 28;19(21):215714. doi: 10.1088/0957-4484/19/21/215714. Epub 2008 Apr 23.
It is shown that ZnO nanorods and nanodots grown by MOCVD exhibit enhanced radiation hardness against high energy heavy ion irradiation as compared to bulk layers. The decrease of the luminescence intensity induced by 130 MeV Xe(23+) irradiation at a dose of 1.5 × 10(14) cm(-2) in ZnO nanorods is nearly identical to that induced by a dose of 6 × 10(12) cm(-2) in bulk layers. The damage introduced by irradiation is shown to change the nature of electronic transitions responsible for luminescence. The change of excitonic luminescence to the luminescence related to the tailing of the density of states caused by potential fluctuations occurs at an irradiation dose around 1 × 10(14) cm(-2) and 5 × 10(12) cm(-2) in nanorods and bulk layers, respectively. More than one order of magnitude enhancement of radiation hardness of ZnO nanorods grown by MOCVD as compared to bulk layers is also confirmed by the analysis of the near-bandgap photoluminescence band broadening and the behavior of resonant Raman scattering lines. The resonant Raman scattering analysis demonstrates that ZnO nanostructures are more radiation-hard as compared to nanostructured GaN layers. High energy heavy ion irradiation followed by thermal annealing is shown to be a way for the improvement of the quality of ZnO nanorods grown by electrodeposition and chemical bath deposition.
结果表明，与体层相比，通过金属有机化学气相沉积（MOCVD）生长的ZnO纳米棒和纳米点对高能重离子辐照表现出增强的辐射硬度。在ZnO纳米棒中，130 MeV Xe(23+) 以1.5×10(14) cm(-2) 的剂量辐照引起的发光强度降低与在体层中6×10(12) cm(-2) 的剂量辐照引起的发光强度降低几乎相同。辐照引入的损伤被证明会改变负责发光的电子跃迁的性质。在纳米棒和体层中，分别在约1×10(14) cm(-2) 和5×10(12) cm(-2) 的辐照剂量下，发生了从激子发光到与由势波动引起的态密度拖尾相关的发光的转变。通过对近带隙光致发光带展宽和共振拉曼散射线行为的分析，也证实了与体层相比，通过MOCVD生长的ZnO纳米棒的辐射硬度提高了一个多数量级。共振拉曼散射分析表明，与纳米结构的GaN层相比，ZnO纳米结构具有更高的辐射硬度。高能重离子辐照后进行热退火被证明是一种改善通过电沉积和化学浴沉积生长的ZnO纳米棒质量的方法。
