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扶手椅型锗碳纳米管的电子结构和几何结构:一项杂化密度泛函研究

On the electronic and geometric structures of armchair GeC nanotubes: a hybrid density functional study.

作者信息

Rathi Somilkumar J, Ray Asok K

机构信息

Department of Physics, University of Texas at Arlington, Arlington, TX 76019, USA.

出版信息

Nanotechnology. 2008 Aug 20;19(33):335706. doi: 10.1088/0957-4484/19/33/335706. Epub 2008 Jul 8.

DOI:10.1088/0957-4484/19/33/335706
PMID:21730632
Abstract

Ab initio calculations within the framework of hybrid density functional theory and the finite cluster approximation have been performed for the electronic and geometric structures of three different types of armchair germanium carbide nanotube, from (3, 3) to (11, 11). Full geometry and spin optimizations with unrestricted symmetry have been performed. Physically pertinent quantities of interest such as the cohesive energies, band gaps, radial buckling, density of states, dipole moments, and Mulliken charge distributions have been investigated in detail for all nanotubes. For type I nanotubes, the largest cohesive energy obtained is 4.092 eV/atom, whereas for type II and type III nanotubes, the values are 3.987 eV/atom and 3.968 eV/atom, respectively. For optimized type I nanotubes, Ge atoms moved toward the tube axis and C atoms moved in the opposite direction after relaxation, opposite to the trends observed in types II and III. The band gaps for type I nanotubes are larger than the bulk 3C-GeC gap, varying between 2.666 and 3.016 eV, while type II and type III nanotubes have significantly lower band gaps, with all nanotubes being semiconducting in nature. Mulliken charge analysis indicates primarily ionic behavior for type I GeC nanotubes and a mixed ionic with covalent behavior for the other two types. None of the tubes appear to be magnetic. Applications in the field of nano-optoelectronic devices, molecular electronics, and band gap engineering are envisioned for GeC nanotubes.

摘要

在混合密度泛函理论框架和有限簇近似下,对从(3, 3)到(11, 11)的三种不同类型的扶手椅型碳化锗纳米管的电子和几何结构进行了从头算计算。进行了具有无限制对称性的全几何和自旋优化。对所有纳米管详细研究了诸如内聚能、带隙、径向屈曲、态密度、偶极矩和穆利肯电荷分布等物理相关的感兴趣量。对于I型纳米管,获得的最大内聚能为4.092 eV/原子,而对于II型和III型纳米管,该值分别为3.987 eV/原子和3.968 eV/原子。对于优化后的I型纳米管,弛豫后Ge原子向管轴移动,C原子向相反方向移动,这与II型和III型中观察到的趋势相反。I型纳米管的带隙大于体相3C-GeC的带隙,在2.666至3.016 eV之间变化,而II型和III型纳米管的带隙明显更低,所有纳米管本质上都是半导体。穆利肯电荷分析表明,I型GeC纳米管主要表现出离子行为,而其他两种类型表现出离子与共价混合行为。所有纳米管似乎都没有磁性。预计碳化锗纳米管在纳米光电器件、分子电子学和带隙工程领域有应用。

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