Jang Chan-Oh, Kim Tae-Hong, Lee Seung-Yong, Kim Dong-Joo, Lee Sang-Kwon
Department of Semiconductor Science and Technology, SPRC, Chonbuk National University, Jeonju 561-756, Korea.
Nanotechnology. 2008 Aug 27;19(34):345203. doi: 10.1088/0957-4484/19/34/345203. Epub 2008 Jul 15.
We report on the electrical characterization of two ohmic contacts (Ti/Au and Ni/Au) to unintentionally doped silicon carbide nanowires (SiCNWs) using the modified transmission line model (TLM) method. Our results indicate that subsequently deposited Ni/Au ohmic contacts on SiCNWs had ∼40 times lower specific contact resistances (SCRs) of 5.9 × 10(-6) ± 8.8 × 10(-6) Ω cm(2) compared to the values of Ti/Au ohmic contacts (2.6 × 10(-4) ± 3.4 × 10(-4) Ω cm(2)). We also conducted a comparison study of the electrical characteristics of top-gated SiCNW field-effect transistors (FETs) with two different ohmic contacts as used for ohmic contact studies. The electrical transport measurements on the SiCNW FET with Ni/Au ohmic contacts show much lower resistance contacts to SiC NWs and better FET performances than those for Ti/Au ohmic contact-based FETs.
我们使用改进的传输线模型（TLM）方法报告了两种欧姆接触（Ti/Au和Ni/Au）与非故意掺杂的碳化硅纳米线（SiCNWs）的电学特性。我们的结果表明，与Ti/Au欧姆接触（2.6×10⁻⁴±3.4×10⁻⁴Ω·cm²）的值相比，随后沉积在SiCNWs上的Ni/Au欧姆接触具有约40倍低的比接触电阻（SCRs），为5.9×10⁻⁶±8.8×10⁻⁶Ω·cm²。我们还对用于欧姆接触研究的具有两种不同欧姆接触的顶栅SiCNW场效应晶体管（FETs）的电学特性进行了比较研究。对具有Ni/Au欧姆接触的SiCNW FET的电输运测量表明，与基于Ti/Au欧姆接触的FET相比，其与SiC NWs的接触电阻低得多，FET性能更好。
