精确测量高能离子辐照碳化硅中的缺陷产生率。

Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions.

作者信息

Guo Linxin, Peng Shengyuan, Liu Yong, Tian Shang, Zhou Wei, Wang Hao, Xue Jianming

机构信息

State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, P. R. China.

Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621999, P. R. China.

出版信息

ACS Omega. 2023 Oct 30;8(44):41977-41982. doi: 10.1021/acsomega.3c07568. eCollection 2023 Nov 7.

DOI:10.1021/acsomega.3c07568

PMID:37970004

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10633851/

Abstract

In this work, we obtained the Si vacancy generation rates η in SiC nanowire samples irradiated with 1, 3 MeV protons, and 2.8 MeV helium ions using the electrical resistivity measurement, which further indicated an intuitive linear function correlation between η and the nuclear stopping power of the incident ions at a low dpa level with a coefficient of 2.15 × 10 eV. Prediction through this correlation is consistent with previous work. Besides, the measured value is about 1/2 of the simulation results with the popular SRIM code. Overall, our work provides a feasible way to get the generation rate of a certain irradiation-induced defect by electric measurements, and the correlation obtained is practically useful in various applications.

摘要

在这项工作中，我们通过电阻率测量获得了用1、3 MeV质子和2.8 MeV氦离子辐照的SiC纳米线样品中的硅空位产生率η，这进一步表明在低剂量损伤水平下，η与入射离子的核阻止本领之间存在直观的线性函数关系，系数为2.15×10 eV。通过这种相关性进行的预测与先前的工作一致。此外，测量值约为使用流行的SRIM代码模拟结果的1/2。总体而言，我们的工作提供了一种通过电学测量获得特定辐照诱导缺陷产生率的可行方法，所获得的相关性在各种应用中具有实际用途。