Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai 200062, China.
ACS Appl Mater Interfaces. 2011 Aug;3(8):3146-51. doi: 10.1021/am200648b. Epub 2011 Jul 19.
A CdS/CdSe quantum-dot (QD)-cosensitized TiO(2) film has been fabricated using a microwave-assisted chemical bath deposition technique and used as a photoanode for QD-sensitized solar cells. The technique allows a direct and rapid deposition of QDs and forms a good contact between QDs and TiO(2) films. The photovoltaic performance of the as-prepared cell is investigated. The results show that the performance of the CdS/CdSe-cosensitized cell achieves a short-circuit current density of 16.1 mA cm(-2) and a power conversion efficiency of 3.06% at one sun (AM 1.5 G, 100 mW cm(-2)), which is comparable to the one fabricated using conventional successive ionic layer adsorption and reaction technique.
采用微波辅助化学浴沉积技术制备了 CdS/CdSe 量子点(QD)敏化 TiO2 薄膜,并将其用作 QD 敏化太阳能电池的光阳极。该技术可直接快速沉积量子点,并在量子点和 TiO2 薄膜之间形成良好的接触。研究了制备的电池的光伏性能。结果表明,CdS/CdSe 共敏化电池的性能在 1 个太阳(AM 1.5G,100 mW cm(-2))下达到 16.1 mA cm(-2)的短路电流密度和 3.06%的功率转换效率,与使用传统连续离子层吸附和反应技术制备的电池相当。