Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, Shanghai, China.
Nanoscale. 2011 May;3(5):2188-93. doi: 10.1039/c1nr10068h. Epub 2011 Mar 30.
CdSe quantum dot (QD ) sensitized TiO(2) films have been fabricated using a one-step microwave assisted chemical bath deposition (MACBD) technique and used as photoanodes for quantum dot sensitized solar cells. This technique allows direct and rapid deposition and a good contact between the CdSe and TiO(2) films. The photovoltaic performances of the cells with CdSe deposited at different times are investigated. The results show that cells based on MACBD deposited TiO(2)/CdSe electrodes achieve a maximum short circuit current density of 12.1 mA cm(-2) and a power conversion efficiency of 1.75% at one Sun (AM 1.5 G, 100 mW cm(-2)), which is comparable with those fabricated using conventional techniques.
CdSe 量子点 (QD) 敏化 TiO(2) 薄膜采用一步微波辅助化学浴沉积 (MACBD) 技术制备，并用作量子点敏化太阳能电池的光阳极。该技术允许 CdSe 与 TiO(2) 薄膜之间直接且快速的沉积和良好的接触。研究了用不同时间沉积 CdSe 的电池的光伏性能。结果表明，基于 MACBD 沉积 TiO(2)/CdSe 电极的电池在一个太阳（AM 1.5G，100 mW cm(-2))下实现了 12.1 mA cm(-2) 的最大短路电流密度和 1.75%的功率转换效率，与使用传统技术制造的电池相当。
