Huang Xiao-Hui, Liu Jian-Ping, Kong Jun-Jie, Yang Hui, Wang Huai-Bing
Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215125, China.
Opt Express. 2011 Jul 4;19 Suppl 4:A949-55. doi: 10.1364/OE.19.00A949.
GaN films grown on PSS are investigated by XRD, CL, SEM and TEM. There are low threading dislocations (TDs) with larger fill factor, which results in better electrostatic discharge (ESD) yield of LEDs. The effect of growth rate on dislocations in GaN films grown on PSS is investigated by TEM. It is found that dislocations density decreases as the growth rates decrease. And the performance of InGaN-based LEDs on different PSS is analyzed. The performance of LEDs grown on different PSS is determined by slanted angle and fill factor simultaneously.
通过X射线衍射（XRD）、阴极发光（CL）、扫描电子显微镜（SEM）和透射电子显微镜（TEM）对在图案化蓝宝石衬底（PSS）上生长的氮化镓（GaN）薄膜进行了研究。存在具有较大填充因子的低位错密度（TDs），这导致发光二极管（LED）具有更好的静电放电（ESD）良率。通过透射电子显微镜（TEM）研究了生长速率对在图案化蓝宝石衬底（PSS）上生长的氮化镓（GaN）薄膜中位错的影响。发现位错密度随着生长速率的降低而降低。并且分析了基于氮化铟镓（InGaN）的发光二极管（LED）在不同图案化蓝宝石衬底（PSS）上的性能。在不同图案化蓝宝石衬底（PSS）上生长的发光二极管（LED）的性能同时由倾斜角和填充因子决定。
