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基于紫外GaN的具有半极性InGaN/GaN多量子阱的光子准晶纳米金字塔结构的多色发射

Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar InGaN/GaN Multiple Quantum Wells.

作者信息

Chen Cheng-Chang, Lin Hsiang-Ting, Chang Shih-Pang, Kuo Hao-Chung, Hung Hsiao-Wen, Chien Kuo-Hsiang, Chang Yu-Choung, Shih M H

机构信息

Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu, 31040, Taiwan.

Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei, 11529, Taiwan.

出版信息

Nanoscale Res Lett. 2021 Sep 16;16(1):145. doi: 10.1186/s11671-021-03576-1.

Abstract

In this study, we demonstrated large-area high-quality multi-color emission from the 12-fold symmetric GaN photonic quasicrystal nanorod device which was fabricated using the nanoimprint lithography technology and multiple quantum wells regrowth procedure. High-efficiency blue and green color emission wavelengths of 460 and 520 nm from the regrown InGaN/GaN multiple quantum wells were observed under optical pumping conditions. To confirm the strong coupling between the quantum well emissions and the photonic crystal band-edge resonant modes, the finite-element method was applied to perform a simulation of the 12-fold symmetry photonic quasicrystal lattices.

摘要

在本研究中,我们展示了利用纳米压印光刻技术和多量子阱再生长工艺制备的具有12重对称性的氮化镓光子准晶体纳米棒器件实现的大面积高质量多色发射。在光泵浦条件下,观察到再生长的铟镓氮/氮化镓多量子阱发出的460纳米和520纳米的高效蓝色和绿色发光波长。为了证实量子阱发射与光子晶体带边共振模式之间的强耦合,应用有限元方法对12重对称光子准晶体晶格进行了模拟。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6155/8446151/db7917d9104e/11671_2021_3576_Fig1_HTML.jpg

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