Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
ACS Nano. 2011 Aug 23;5(8):6148-55. doi: 10.1021/nn2014722. Epub 2011 Jul 18.
Ultrafine one-dimensional (1-D) semiconducting nanostructures with diameters below 10 nm are attracting great research attention. Using a laser-ablation chemical vapor deposition (CVD) method, we reported the synthesis of single-crystal In(2)O(3) nanowires with diameter below 4 nm. The as-synthesized ultrathin In(2)O(3) nanowires act as the ultrathin branches of hierarchical In(2)O(3) nanostructures and show fast photoinduced switching surface wettability behaviors, and the contact angle decreased from 134.3 to 0° in 10 min. Transparent thin-film transistors (TTFTs) were fabricated using the as-synthesized product, and the device conductance was 1-2 orders higher than the average conductance of the In(2)O(3) single nanowire devices, revealing good opportunity in transparent electronics.
使用激光烧蚀化学气相沉积（CVD）方法，我们报道了直径低于 4nm 的单晶 In(2)O(3)纳米线的合成。所合成的超薄 In(2)O(3)纳米线充当了分级 In(2)O(3)纳米结构的超薄分支，并表现出快速的光诱导开关表面润湿性行为，接触角在 10 分钟内从 134.3 降至 0°。使用所合成的产物制造了透明薄膜晶体管（TTFT），并且器件电导比 In(2)O(3)单根纳米线器件的平均电导高出 1-2 个数量级，这显示出在透明电子学中的良好机会。
