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激光加热诱导 GaAs 纳米线的局域修饰。

Local modification of GaAs nanowires induced by laser heating.

机构信息

Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, D-85748 Garching, Germany.

出版信息

Nanotechnology. 2011 Aug 12;22(32):325701. doi: 10.1088/0957-4484/22/32/325701. Epub 2011 Jul 14.

DOI:10.1088/0957-4484/22/32/325701
PMID:21757796
Abstract

GaAs nanowires were heated locally under ambient air conditions by a focused laser beam which led to oxidation and formation of crystalline arsenic on the nanowire surface. Atomic force microscopy, photoluminescence and Raman spectroscopy experiments were performed on the same single GaAs nanowires in order to correlate their structural and optical properties. We show that the local changes of the nanowires act as a barrier for thermal transport which is of interest for thermoelectric applications.

摘要

砷化镓纳米线在环境空气条件下被聚焦激光束局部加热,导致纳米线表面氧化并形成晶态砷。在相同的单个砷化镓纳米线上进行了原子力显微镜、光致发光和拉曼光谱实验,以关联它们的结构和光学性质。我们表明,纳米线的局部变化充当了热传输的屏障,这对于热电应用很有意义。

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引用本文的文献

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