硅衬底上闪锌矿型单 InAs 纳米线的喇曼研究。

Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate.

机构信息

Department of Physics, School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China.

出版信息

Nanoscale Res Lett. 2013 Jan 14;8(1):27. doi: 10.1186/1556-276X-8-27.

DOI:10.1186/1556-276X-8-27

PMID:23316901

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3552715/

Abstract

We report polarized Raman scattering studies on single InAs nanowires (NWs). The NWs were grown by metalorganic chemical vapor deposition on Si (111) substrates without external catalyst and showed a zinc-blende crystal structure. The single NWs were studied for different polarization excitation of the incident laser beam relative to the NW axis. The transverse optical (TO) mode exhibits maximum intensity when both the incident and analyzed light polarizations are parallel to the NW axis. The TO mode of InAs NWs is found to act like a nearly perfect dipole antenna, which can be attributed to the one-dimensional NW geometry and Raman selection rules.

摘要

我们报告了对单个 InAs 纳米线（NWs）的偏振拉曼散射研究。这些 NWs 是通过金属有机化学气相沉积在 Si（111）衬底上生长的，没有外部催化剂，并且表现出闪锌矿晶体结构。我们对不同偏振激发的单个 NWs 进行了研究，入射激光束相对于 NW 轴的偏振激发。当入射光和分析光的偏振方向都平行于 NW 轴时，横向光学（TO）模式表现出最大的强度。发现 InAs NWs 的 TO 模式的作用类似于近乎完美的偶极天线，这可以归因于一维 NW 几何形状和拉曼选择定则。