MIND-IN2UB, Dept. Electrònica, Universitat de Barcelona, Martí i Fanquès 1, 08028, Barcelona, Spain.
Opt Lett. 2011 Jul 15;36(14):2617-9. doi: 10.1364/OL.36.002617.
Blue-green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000 °C. Transmission electron microscopy and EL studies allowed ascribing the blue-green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO(2) layer. Charge transport analysis is reported and allows for identifying the origin of this two-wavelength switching effect.
在一种金属氧化物半导体发光器件中实现了蓝绿至近红外的电致发光（EL）转换，其中介电层被富硅氧化硅/氮化物双层结构取代。为了形成 Si 纳米结构，将这些层用高能 Si 离子注入，导致 Si 过剩达到 19%，然后在 1000°C 下退火。透射电子显微镜和 EL 研究将蓝绿光发射归因于 Si 氮化物相关缺陷，近红外带则归因于嵌入 SiO(2)层的 Si 纳米团簇的发射。报告了电荷输运分析，这使得能够确定这种双波长开关效应的起源。
