Namazu Takahiro, Yamashita Naoaki, Kakinuma Shigeru, Nishikata Kentaro, Naka Nobuyuki, Matsumoto Koichi, Inoue Shozo
Division of Mechanical Systems, Department of Mechanical and Systems Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo 671-2201, Japan.
J Nanosci Nanotechnol. 2011 Apr;11(4):2861-6. doi: 10.1166/jnn.2011.3902.
In this paper, in-situ cathodoluminescence (CL) stress analysis of a silicon oxide (SiO(x)) thin film prepared by wet thermal oxidation is described. The specially-developed uniaxial tensile loading jig was used to apply tensile displacement to the SiO(x) film specimen. CL spectra of the specimen during tensile loading were obtained, and the peak position of around 1.85 eV emission band was monitored for tensile stress analysis. The peak position gradually shifted towards higher/lower energy side when tensile displacement increased/decreased. The tensile stress-to-emission energy ratio of 6.21-8.97 x 10(2) GPa/eV was estimated on the basis of linear elastic theory, which demonstrated that CL is able to provide information on stress induced in the film. Scanning electron microscopy (SEM) revealed that the fracture of SiO(x) and SCS laminated structure occurred at the vicinity of SiO(x) film surface.
本文描述了通过湿热氧化制备的氧化硅（SiO(x)）薄膜的原位阴极发光（CL）应力分析。使用专门开发的单轴拉伸加载夹具对SiO(x)薄膜试样施加拉伸位移。获得了拉伸加载过程中试样的CL光谱，并监测了约1.85 eV发射带的峰值位置以进行拉伸应力分析。当拉伸位移增加/减少时，峰值位置逐渐向更高/更低能量侧移动。基于线性弹性理论估计拉伸应力与发射能量之比为6.21 - 8.97×10(2) GPa/eV，这表明CL能够提供有关薄膜中诱导应力的信息。扫描电子显微镜（SEM）显示SiO(x)和SCS层压结构的断裂发生在SiO(x)薄膜表面附近。
